Electrical connection for semiconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11508616
APP PUB NO 20210202309A1
SERIAL NO

17201637

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Abstract

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In one example, a method includes performing a first etching process to pattern a dielectric layer and expose a contact etch stop layer, performing a second etching process to remove the etch stop layer and expose a top surface of an underlying feature, performing a third etching process to laterally recess the etch stop layer, and depositing a conductive material over the underlying feature to create a conductive feature in direct contact with the underlying feature.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jyh-Huei Hsinchu, TW 53 417
Tsai, Kuo-Chiang Hsinchu, TW 38 62

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