Electrostatic discharge protection circuit triggered by PNP bipolar action
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United States of America Patent
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-
Dec 31, 2002
Issued Date -
N/A
app pub date -
Aug 7, 2000
filing date -
Dec 30, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An electrostatic discharge protection circuit, comprising a semiconductor-controlled rectifier and a PMOS device. The semiconductor-controlled rectifier, coupled between two nodes, has an N-type semiconductor layer. The PMOS device, integrated with the semiconductor-controlled rectifier to share a first P-type doped region, has a PNP device located in the N-type semiconductor layer. When one of the nodes is coupled to the electrostatic discharge power, the PNP device will conduct to trigger the semiconductor-controlled rectifier.
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