Method for fabricating a 3D semiconductor apparatus having two vertically disposed seminconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11302587
APP PUB NO 20220077003A1
SERIAL NO

16951125

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

Aspects of the present disclosure provide a method for fabricating a 3D semiconductor apparatus. The method can include forming a multilayer stack including a plurality of dielectric layers. The dielectric layers can include three or four dielectric materials that can be etched selectively with respect to one another. The method can also include forming opening(s) in the multilayer stack, and filling the opening(s) with first and second channel materials to form first and second channels that interface at a transition dielectric layer the multilayer stack. The method can also include removing second and first source/drain (S/D) dielectric layers of the multilayer stack and replacing with second and first S/D materials to form second and first S/D regions, respectively. The method can also include removing gate dielectric layers of the multilayer stack and replacing with a gate material to form gate regions of the 3D semiconductor apparatus.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • TOKYO ELECTRON LIMITED

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fulford, H Jim Marianna, US 234 1647
Gardner, Mark I Cedar Creek, US 660 10786

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Oct 12, 2025
7.5 Year Payment $3600.00 $1800.00 $900.00 Oct 12, 2029
11.5 Year Payment $7400.00 $3700.00 $1850.00 Oct 12, 2033
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00