Method of manufacturing low resistivity p-type compound semiconductor material
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United States of America Patent
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Aug 6, 2002
Grant Date -
Jun 6, 2002
app pub date -
Feb 3, 2000
filing date -
Jan 27, 2000
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Abstract
The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
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