Weir method for improved single crystal growth in a continuous Czochralski process

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United States of America Patent

PATENT NO 9353457
APP PUB NO 20130233237A1
SERIAL NO

13604277

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Abstract

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A method is disclosed for continuous CZ crystal growing wherein one or more crystal ingots are pulled into a growth chamber from a crystal/melt interface defined in a crucible containing molten crystalline material that is continuously replenished by crystalline feedstock. The method includes separating the molten crystalline material, controlling the flow of the molten crystalline material and defining an annular space with respect to sidewalls of a heat shield in the chamber.

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Patent Owner(s)

Patent OwnerAddress
CORNER STAR LIMITEDUNIT 1703B - 1706 LEVEL 17 INTERNATIONAL COMMERCE CENTRE 1 AUSTIN ROAD WEST KOWLOON

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bender, David L Thousand Oaks, US 33 266
Smith, David E A San Mateo, US 6 338

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