Solid-state image sensor with two different trench isolation implants
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United States of America Patent
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May 3, 2011
Grant Date -
Nov 12, 2009
app pub date -
May 1, 2009
filing date -
May 12, 2008
priority date (Note) -
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Abstract
A solid-state image sensor includes: a trench isolation region; a photodiode region for converting incident light to signal charges and accumulating the signal charges therein; a floating diffusion region for accumulating the signal charges of the photodiode region; a gate electrode formed over the element formation region located between the photodiode region and the floating diffusion region, and formed so that both ends of the gate electrode respectively overlap a part of the photodiode region and a part of the floating diffusion region; and an inactive layer formed in a region located in a bottom portion and sidewall portions of the trench isolation region. An impurity concentration in a region located under the gate electrode in the inactive layer is lower than that in a region other than the region located under the gate electrode in the inactive layer.
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