Use of Cl2 and/or HCl during silicon epitaxial film formation
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 8, 2010
Grant Date -
Nov 23, 2006
app pub date -
Jul 28, 2006
filing date -
Dec 1, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully