Field-symmetric beam detector for semiconductors
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United States of America Patent
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Jul 22, 1997
Grant Date -
N/A
app pub date -
Jun 28, 1994
filing date -
Jun 28, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An alignment mark and pattern is disclosed for use on semiconductor substrates which are to be patterned in an electron lithography machine. The detector includes two interleaved N-well portions mounted on a P-substrate. The interleaved 'fingers' of the N-well portions are spaced to provide narrow gaps which are approximately the width of a projected electron beam. When the beam is located within the gap (or gaps) the projection is in alignment.
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