Backside capacitor techniques
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United States of America Patent
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Aug 2, 2022
Grant Date -
Dec 31, 2020
app pub date -
Apr 21, 2020
filing date -
Jun 28, 2019
priority date (Note) -
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Abstract
Some embodiments relate to a semiconductor structure including a semiconductor substrate having a frontside surface and a backside surface. An interconnect structure is disposed over the frontside surface. The interconnect structure includes a plurality of metal lines and vias that operably couple semiconductor transistor devices disposed in or on the frontside surface of the semiconductor substrate to one another. A trench is disposed in the backside surface of the semiconductor substrate. The trench is filled with an inner capacitor electrode, a capacitor dielectric layer overlying the inner capacitor electrode, and an outer capacitor electrode overlying the capacitor dielectric layer.
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