Growth of silicon crystal from melt having extraordinary eddy flows on its surface
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United States of America Patent
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Jan 6, 1998
Grant Date -
N/A
app pub date -
Mar 22, 1996
filing date -
Mar 24, 1995
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Expired
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Abstract
When a Si single crystal 8 is pulled up from a melt 6 received in a crucible 2, the state of eddy flows generated in the melt 6 is judged from the temperature distribution of the melt at the surface. According to the result of judgement, the gas, i.e. N.sub.2, Xe or Kr, which causes extraoridnary deviation in the density of a melt 6 is added to an atmospheric gas, so as to keep the eddy flows under unstabilized condition. The effect of said gas is typical in the case of crystal growth from the melt to which a dopant such as Ca, Sb, Al, As or In having the effect to suppress the extraordinary deviation in the density is added. Since the single crystal is pulled up from the melt held in the temperature-controlled condition at the surface, impurity distribution and oxygen distribution are made uniform along the direction of crystal growth. A single crystal obtained in this way has highly-stabilized quality.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- COVALENT MATERIALS CORPORATION;RESEARCH DEVELOPMENT CORPORATION OF JAPAN;WACKER NSCE CORPORATION
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Ikari, Atsushi | Tsukuba, JP | 21 | 541 |
Izunome, Koji | Ami-machi, JP | 24 | 149 |
Kawanishi, Souroku | Tsukuba, JP | 6 | 37 |
Kimura, Shigeyuki | Tsukuba, JP | 30 | 243 |
Sasaki, Hitoshi | Omiya, JP | 144 | 810 |
Togawa, Shinji | Tsukuba, JP | 8 | 43 |
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