Fork-like memory structure for ULSI DRAM and method of fabrication
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 4, 2000
Grant Date -
N/A
app pub date -
Dec 5, 1996
filing date -
Dec 5, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A masking and etching technique during the formation of a memory cell capacitor which simultaneously separates storage poly into individual storage poly nodes and etches recesses into the storage poly nodes which increase the surface area of the storage poly nodes and thereby increase the capacitance of a completed memory cell without additional processing steps.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully