Semiconductor memory devices and methods of manufacturing thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11705177
APP PUB NO 20220293158A1
SERIAL NO

17470854

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Abstract

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A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures are configured to be applied with respective different voltages in accordance with the varying width of the first and second conductive structures.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liou, Peng-Chun Hsinchu, TW 11 1
Liu, Yi-Ching Hsinchu, TW 77 336
Wang, Yih Hsinchu, TW 237 701
Wu, Chung-Wei Hsinchu, TW 61 75
Wu, Zhiqiang Hsinchu, TW 336 4905

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