Importance

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Abstract

An improved cross-field diode sputtering target assembly adapted for sputtering a selected material having an ion target wherein a selected surface is formed of a selected material in a predetermined closed loop pattern having a central opening therein, and wherein the selected surface has spaced edges and is formed of a material adapted to be controllably eroded in a diode sputtering process, walls positioned contiguous or adjacent to each of the spaced edges of the selected surface wherein each of the walls extend substantially normal from and beyond each spaced edge of the selected surface of the ion target and a magnetic member having poles positioned in an opposed spaced relationship to each other and enclosing the walls and the ion target for providing a linear magnetic field (B) through the walls, over the selected surface and through the ion target and wherein the magnetic member has a linear magnetic field of sufficient strength for plasma entrapment between the walls and over the selected surface wherein the selected surface is adapted to have an electric field (E) applied thereacross at a direction substantially normal to the magnetic field (B) to develop a B.times.E field and to entrap secondary electrons at the selected surface to control the erosion pattern thereof is shown. A method for utilizing the improved cross-field diode sputtering target assembly is also shown.

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First Claim