Probe card, manufacturing method of probe card, semiconductor inspection apparatus and manufacturing method of semiconductor device
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United States of America Patent
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-
May 25, 2010
Grant Date -
Aug 27, 2009
app pub date -
Oct 17, 2008
filing date -
Feb 27, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A silicon substrate is used as a mold, and thin films such as metal films and polyimide films are sequentially stacked on the silicon substrate by using photolithography techniques, thereby forming a probe sheet having contact terminals having a pyramidal shape or a truncated pyramidal shape disposed at distal ends of cantilever beam structures. A fixing substrate is further fixed to the probe sheet, and then, the formed probe sheet is sequentially stacked and formed on the silicon substrate, the substrate is fixed, and the silicon substrate and predetermined polyimide films are removed by etching, thereby forming the group of contact terminals with the cantilever beam structures at a time.
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