Method of forming semiconductor device having three-dimensional channel structure
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United States of America Patent
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Feb 22, 2011
Grant Date -
Mar 19, 2009
app pub date -
Sep 16, 2008
filing date -
Sep 19, 2007
priority date (Note) -
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Abstract
A method of forming a semiconductor device is provided. A hollowed portion is formed over an active region of a semiconductor substrate. The bottom of the hollowed portion is lowered in level than the surface of an isolation region of the substrate. A first mask is formed in the hollowed portion, except on a side region that is adjacent to the boundary between the active region and the isolation region. A trench is formed in the side region of the active region by using the first mask and the isolation region as a mask.
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