Semiconductor device

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United States of America Patent

PATENT NO 11843039
APP PUB NO 20230090769A1
SERIAL NO

18074125

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Abstract

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A semiconductor device includes a gate stack including a gate insulating layer and a gate electrode on the gate insulating layer. The gate insulating layer includes a first dielectric layer and a second dielectric layer on the first dielectric layer, and a dielectric constant of the second dielectric layer is greater than a dielectric constant of the first dielectric layer. The semiconductor device also includes a first spacer on a side surface of the gate stack, and a second spacer on the first spacer, wherein the second spacer includes a protruding portion extending from a level lower than a lower surface of the first spacer towards the first dielectric layer, and a dielectric constant of the second spacer is greater than the dielectric constant of the first dielectric layer and less than a dielectric constant of the first spacer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Back, Doosan Seoul, KR 12 0
Han, Jung-Hoon Hwaseong-si, KR 36 96
Kil, Gyuhyun Hwaseong-si, KR 12 0
Kim, Dongoh Daegu, KR 26 30

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