Process of dual or single damascene utilizing separate etching and DCM apparati
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United States of America Patent
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Nov 23, 2004
Grant Date -
N/A
app pub date -
Dec 1, 2003
filing date -
Dec 1, 2003
priority date (Note) -
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Abstract
A process of dual damascene or damascene. The dual damascene process entails providing an etching apparatus, a DCM machine and a wafer, the wafer having a metal line, a stop layer, a dielectric layer, a contact, and a photoresist layer. The dielectric layer and the contact are etched in the etching apparatus to form a trench. The photoresist and the contact are ashed in the DCM machine. Finally the wafer is wet cleaned.
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