Method of forming a split-gate memory cell with a tip in the middle of the floating gate
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United States of America Patent
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Mar 1, 2005
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N/A
app pub date -
Nov 13, 2002
filing date -
Oct 31, 2001
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Abstract
A split-gate FLASH memory cell is formed with a floating gate that has a tip in the middle of the floating gate. The method of the present invention forms the tip to have a substantially constant radius of curvature, tip angle, and distance to the overlying tunneling oxide. As a result, the tip of the present invention increases the localized enhancement of the electric field.
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