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Abstract

A semiconductor mask-programmable read-only-memory array structure provides double density storage of data information by means of thin film memory cell transistors formed on both sides of a layer of thin film polysilicon. At a bottom surface of a layer of thin film polysilicon which has a bottom gate oxide grown thereon, a plurality of polysilicon bottom cell wordlines intersects a plurality of bitlines to form an array of bottom cell memory transistors. The bitlines are heavily-doped diffusion regions within the layer thin film polysilicon. Additionally, a top surface of the layer of thin film polysilicon has a top gate oxide grown thereon. Over this top gate oxide, a plurality of polysilicon top cell wordlines intersects the plurality of bitlines to form an array of top cell memory transistors, thereby producing a NOR-type read-only-memory array structure with double the storage density of conventional, prior art structures.

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First Claim