Silicon carbide semiconductor device
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United States of America Patent
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Sep 3, 2013
Grant Date -
May 31, 2012
app pub date -
Oct 4, 2011
filing date -
Nov 26, 2010
priority date (Note) -
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Abstract
In the manufacture of a silicon carbide semiconductor device having a termination region being a JTE region or FLR, the margin of the amount of etching for removing a damage layer formed in the surface of the termination region is enlarged. A silicon carbide semiconductor device has a termination region being a JTE (Junction Termination Extension) region or an FLR (Field Limiting Ring) at a termination of the semiconductor elements. The termination region is formed by one step of ion implantation in which the kind of impurity and the implant energy are fixed. In the impurity concentration profile of the termination region in the depth direction, the concentration peak in the shallowest position is in a position deeper than 0.35 μm from the surface, and the concentration in the surface portion is not more than one-tenth of the shallowest concentration peak.
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