Semiconductor device, and method for manufacturing the same
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United States of America Patent
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Jul 27, 2004
Grant Date -
Feb 20, 2003
app pub date -
Jul 31, 2002
filing date -
Aug 1, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device in accordance with the present invention is equipped with a gate electrode 10 formed on a BOX layer 2, a gate oxide film 11 formed on the gate electrode, a body region 12a composed of epitaxial Si formed on the gate oxide film, diffusion layers 18 and 19 for source/drain regions formed on both sides of the body region, and a body terminal connected to the body region for applying a specified potential to the body region. As a result, the substrate floating effect is suppressed even in a transistor having a short gate length and a long gate width.
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