Three-dimensional semiconductor memory devices

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11723221
APP PUB NO 20210313398A1
SERIAL NO

17113609

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Abstract

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A three-dimensional (3D) semiconductor memory device including first cell stacks arranged in first and second directions; second cell stacks disposed on the first cell stacks and arranged in the first and second directions; first conductive lines extending in the first direction and provided between a substrate and the first cell stacks; common conductive lines extending in the second direction and provided between the first and second cell stacks; etch stop patterns extending in the second direction and provided between the common conductive lines and top surfaces of the first cell stacks; second conductive lines extending in the first direction and provided on the second cell stacks; and a capping pattern covering a sidewall of the common conductive lines and a sidewall of the etch stop patterns, wherein each of the common conductive lines has a second thickness greater than a first thickness of each of the first conductive lines.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jeon, Sujin Hwaseong-si, KR 3 2
Kang, Yunseung Seoul, KR 3 3
Kim, Sang-Kuk Seongnam-si, KR 21 83
Kim, Yeonji Suwon-si, KR 8 26
Kwon, Oik Yongin-si, KR 11 20

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