High-density SOI cross-point memory array and method for fabricating same
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United States of America Patent
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Feb 21, 2006
Grant Date -
Nov 25, 2004
app pub date -
May 20, 2003
filing date -
May 20, 2003
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Abstract
A method for fabricating a high-density silicon-on-insulator (SOI) cross-point memory array and an array structure are provided. The method comprises: selectively forming a hard mask on an SOI substrate, defining memory areas, active device areas, and top electrode areas; etching to remove the exposed silicon (Si) surfaces; selectively forming metal sidewalls adjacent the hard mask; filling the memory areas with memory resistor material; removing the hard mask, exposing the underlying Si active device areas; forming an overlying layer of oxide; etching the oxide to form contact holes to the active device areas; forming diodes in the contact holes; and, forming bottom electrode lines overlying the diodes.
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