High-k dielectric for thermodynamically-stable substrate-type materials
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United States of America Patent
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Sep 18, 2007
Grant Date -
Jul 26, 2007
app pub date -
Mar 31, 2003
filing date -
Apr 15, 2002
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Abstract
Excellent capacitor-voltage characteristics with near-ideal hysteresis are realized in a capacitive-like structure that uses an electrode substrate-type material with a high-k dielectric layer having a thickness of a few-to-several Angstroms capacitance-based SiO.sub.2 equivalent ('T.sub.Ox, Eq'). According to one particular example embodiment, a semiconductor device structure has an electrode substrate-type material having a Germanium-rich surface material. The electrode substrate-type material is processed to provide this particular electrode surface material in a form that is thermodynamically stable with a high-k dielectric material. A dielectric layer is then formed over the electrode surface material with the high-k dielectric material at a surface that faces, lies against and is thermodynamically stable with the electrode surface material.
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