Magnetic memory cell with low-resistive electrode via and method of forming same

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United States of America Patent

PATENT NO 11778918
SERIAL NO

16998911

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Abstract

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A method for manufacturing a memory device includes forming a via trench in a substrate and forming a via in the via trench. A lower portion of the via includes a first metal and an upper portion of the via includes a second metal that is different from the first metal. The method further includes forming a magnetic tunneling junction over the via and forming a top electrode over the magnetic tunneling junction.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Dian-Hau Hsinchu, TW 134 937
Shen, Hsiang-Ku Hsinchu, TW 76 205
Wang, Liang-Wei Hsinchu, TW 19 111

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