CIRCUIT AND METHOD OF TEMPERATURE DEPENDENT POWER AMPLIFIER BIASING
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United States of America Patent
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Aug 9, 2011
Grant Date -
Aug 11, 2011
app pub date -
Feb 11, 2010
filing date -
Feb 11, 2010
priority date (Note) -
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Abstract
A circuit and method are provided for reducing dynamic EVM of a power amplifier (PA) used for RF communication. A temperature dependent boost bias signal is applied to the bias input port of amplifier circuitry of the PA in dependence upon a temperature of the amplifier circuitry to compensate for transience in the gain or phase response of the PA while components of the PA is differentially warming-up, advantageously taking into account an actual temperature of the amplifier circuitry.
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