Imaging devices having a layer of pixel component material with discrete constructs for operating electrical pixel components and methods of forming the same
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United States of America Patent
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Feb 8, 2011
Grant Date -
Aug 13, 2009
app pub date -
Apr 17, 2009
filing date -
Jun 9, 2005
priority date (Note) -
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Abstract
Methods and structures to reduce the occurrence of crosstalk and pixel noise in solid state imager arrays. In an exemplary embodiment, a section of a layer patterned to form polysilicon buried-contacts in the pixel structure is also patterned to be disposed over the active, photosensor portion of the pixel. The section of the buried-contact layer covering the photosensor portion of the pixel serves to filter the light striking the buried-contact layer before the light strikes the photosensor. The polysilicon light filter reduces the amount of stray light entering from the adjacent pixels without adding significant processing complexity.
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