Semiconductor structure having air gap

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United States of America Patent

PATENT NO 11877435
APP PUB NO 20230225106A1
SERIAL NO

17573774

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Abstract

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The present disclosure provides a semiconductor structure and a method of manufacturing the semiconductor structure. The semiconductor structure includes a first bit line on a substrate; a contact adjacent to the first bit line on the substrate, wherein a first distance between a top portion of the contact and the first bit line is less than a second distance between a lower portion of the contact and the first bit line; a dielectric layer, disposed conformally over the first bit line, the substrate, and the contact; and a first air gap, sealed by the dielectric layer and defined by the first bit line, the substrate and the contact.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONNO 98 NANLIN RD TAISHAN DIST NEW TAIPEI CITY 243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kung, Yao-Hsiung Taoyuan, TW 8 11

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