Structures including means for lateral current carrying capability improvement in semiconductor devices
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United States of America Patent
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Mar 8, 2011
Grant Date -
Apr 23, 2009
app pub date -
Oct 17, 2007
filing date -
Oct 17, 2007
priority date (Note) -
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Abstract
A design structure including a semiconductor structure. The semiconductor structure includes (a) a substrate; (b) a first semiconductor device on the substrate; (c) N ILD (Inter-Level Dielectric) layers on the first semiconductor device, wherein N is an integer greater than one; and (d) an electrically conductive line electrically coupled to the first semiconductor device. The electrically conductive line is adapted to carry a lateral electric current in a lateral direction parallel to an interfacing surface between two consecutive ILD layers of the N ILD layers. The electrically conductive line is present in at least two ILD layers of the N ILD layers. The electrically conductive line does not comprise an electrically conductive via that is adapted to carry a vertical electric current in a vertical direction perpendicular to the interfacing surface.
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