Cmos-compatible read only memory and method for fabricating the same
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United States of America Patent
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Nov 23, 2004
Grant Date -
Oct 7, 2004
app pub date -
Apr 3, 2003
filing date -
Mar 12, 2003
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Abstract
A CMOS-compatible read only memory (ROM) includes a first single-poly PMOS transistor that is serially electrically connected to a second single-poly PMOS transistor for recording digital data '1' or digital data '0'. The first and second single-poly PMOS transistors are both formed on an N-well of a P-type substrate. The first single-poly PMOS transistor includes a select gate electrically connected to a word line, a first P+ source doping region electrically connected to a source line, and a first P+ drain doping region. The second single-poly PMOS transistor includes a floating gate, a second P+ source doping region electrically connected to the first P+ drain doping region, and a second P+ drain doping region electrically connected to a bit line. The second P+ source doping region and the second P+ drain doping region define a floating gate channel region under the floating gate. A fast FPLD-to-ROM conversion method is also disclosed. After the final software code is fixed and the addresses where the memory units to be coded are determined, the FPLD are transformed into a ROM by either changing the layout of a photo mask that is used to define polysilicon gates to cancel the pre-selected floating gates according to the fixed software code, or by ion implanting the pre-selected floating gate channel regions underneath those floating gates where the memory units are to be coded.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- EMEMORY TECHNOLOGY INC.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Hsin-Ming | Tainan Hsien, TW | 118 | 1016 |
Ho, Ming-Chou | Hsin-Chu, TW | 29 | 359 |
Hsu, Ching-Hsiang | Hsin-Chu, TW | 184 | 2778 |
Huang, Shih-Chan | Taipei Hsien, TW | 9 | 77 |
Shen, Shih-Jye | Hsin-Chu, TW | 45 | 539 |
Wong, Wei-Zhe | Tai-Nan, TW | 44 | 247 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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