Semiconductor devices and methods of forming the same

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United States of America Patent

PATENT NO 11908748
APP PUB NO 20230084821A1
SERIAL NO

18055498

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Abstract

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A semiconductor device includes a substrate having a first region and a second region of opposite conductivity types, an isolation feature over the substrate, a first fin protruding from the substrate and through the isolation feature in the first region, a first epitaxial feature over the first fin, a second fin protruding from the substrate and through the isolation feature in the second region, and a second epitaxial feature over the second fin. A portion of the isolation feature located between the first fin and the second fin protrudes from a top surface of the isolation feature.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDHSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yen-Ming Hsin-Chu County, TW 323 2153
Chu, Feng-Ching Pingtung County, TW 43 47
Lee, Wei-Yang Taipei, TW 218 888
Yang, Feng-Cheng Hsinchu County, TW 224 586

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