Method for hard mask CD trim
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United States of America Patent
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Feb 23, 2010
Grant Date -
Oct 25, 2007
app pub date -
Jun 22, 2007
filing date -
Aug 13, 2002
priority date (Note) -
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Abstract
Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an inductively coupled etching apparatus. The high density plasma is set and controlled to isotropically contact particular regions of the inorganic material to allow for trimming and control of a critical dimension associated with the inorganic material.
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