Semiconductor device

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United States of America Patent

PATENT NO 11810976
APP PUB NO 20220262949A1
SERIAL NO

17178729

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Abstract

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In one embodiment, a transistor has a drift region that is formed to have a plurality of zones having different vertical doping profiles across the zones. At least one of the zones has a vertical doping profile that has a first peak near a top surface of the zone and a second peak near a bottom surface. An embodiment may have a lower doping in a region that is between the two peaks.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC5005 E MCDOWELL ROAD MAILDROP A700 PHOENIX AS 85008

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Weize Phoenix, US 57 444
Griswold, Mark Gilbert, US 88 1077

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