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Abstract

A high efficiency back side contact solar cell is fabricated using a self-aligning process that reduces the number of masks and alignments as compared with prior processes. The back surface of the cell is patterned by etching into an array of bilevel, interdigitated mesas and trenches, separated by inclined surfaces. Doping of the back surface region produces laterally alternating and overlapping P and N regions associated with the mesas and trenches. A metalization layer is deposited over the entire back side of the cell. The portions of the metalization on the inclined surfaces are readily removed by etching. Removal of the metalization on the inclines surfaces separates the mesa conductors from the trench conductors, leaving a well defined interdigitated array of positive electrodes and negative electrodes.

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First Claim