Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device
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United States of America Patent
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Aug 9, 2011
Grant Date -
Oct 28, 2010
app pub date -
Jul 2, 2010
filing date -
Jan 18, 2007
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Abstract
, wherein an amount of germanium (Ge) ranges from about 10 at. %≦b≦about 15 at. %, an amount of antimony (Sb) ranges from about 20 at. %≦c≦about 25 at. %, and an amount of tellurium (Te) ranges from about 40 at. %≦d≦about 55 at. %.
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