Fin field-effect transistor device with composite liner for the Fin

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United States of America Patent

PATENT NO 11894464
APP PUB NO 20210343867A1
SERIAL NO

17378387

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Abstract

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A method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a liner over the fin; performing a surface treatment process to convert an upper layer of the liner distal to the fin into a conversion layer, the conversion layer comprising an oxide or a nitride of the liner; forming isolation regions on opposing sides of the fin after the surface treatment process; forming a gate dielectric over the conversion layer after forming the isolation regions; and forming a gate electrode over the fin and over the gate dielectric.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kao, Wan-Yi Baoshan Township, TW 63 92
Ko, Chung-Chi Nantou, TW 125 1200

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