Semiconductor device and semiconductor module employing thereof
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United States of America Patent
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Aug 3, 2010
Grant Date -
Jan 12, 2006
app pub date -
Jun 28, 2005
filing date -
Jun 30, 2004
priority date (Note) -
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Abstract
A semiconductor device is provided with a silicon substrate and a structure filled in a through hole that has a rectangular cross section and extends through the silicon substrate. The structure comprises a pipe-shaped through electrode, stripe-shaped through electrodes, silicons, a first insulating film, a second insulating film and a third insulating film. The pipe-shaped through electrode is utilized as a pipe-shaped electric conductor that extends through the silicon substrate. In addition, the stripe-shaped through electrodes are provided in the interior of the pipe-shaped through electrode so that the stripe-shaped through electrodes extend through the silicon substrate and is spaced away from the pipe-shaped through electrode. A plurality of through electrodes are provided in substantially parallel within the inner region of the pipe-shaped through electrode.
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