Field effect transistor having MOS structure made of nitride compound semiconductor
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United States of America Patent
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Apr 16, 2013
Grant Date -
May 27, 2010
app pub date -
Dec 16, 2009
filing date -
Jun 1, 2007
priority date (Note) -
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Abstract
A semiconductor layer of a second conductive type is formed on a RESURF layer of a first conductive type that is formed on a buffer layer. A contact layer of the first conductive type is formed in or on the semiconductor layer. A source electrode is formed on the contact layer. A drain electrode is formed on the RESURF layer. A gate insulating film is formed on the semiconductor layer to overlap with an end of the semiconductor layer. A gate electrode is formed on the gate insulating film to overlap with the end of the semiconductor layer. A channel formed near the end of the semiconductor layer is electrically connected to the RESURF layer.
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