Method of forming and operating trench split gate non-volatile flash memory cell structure
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United States of America Patent
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Feb 11, 2003
Grant Date -
Nov 28, 2002
app pub date -
Apr 23, 2002
filing date -
Apr 24, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming and operating a trench split-gate non-volatile flash memory cell structure. The auxiliary gate of the structure is formed inside a trench on one side of the gate and the source terminal is underneath the auxiliary gate, thereby reducing overall area occupation of the auxiliary gate and the source terminal relative to the cell and increasing packing density. By enclosing the common source terminal inside a deep N-well layer, source resistance for reading data from the cell is reduced and the process of etching out a contact opening is simplified. The structure also ensures the injection of most hot electrons into the floating gate, thereby increasing execution speed.
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