Semiconductor memory device with power gating circuit for data input/output control block and data input/output block and semiconductor system including the same

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United States of America Patent

PATENT NO 11670347
APP PUB NO 20210166739A1
SERIAL NO

17174527

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Abstract

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A semiconductor device includes a data input/output control block including a first power gating circuit coupled to a supply terminal of a first voltage and a second power gating circuit coupled to a supply terminal of a second voltage, the data input/output control block suitable for generating a control signal using the first and second voltages, a data input/output block including a third power gating circuit coupled to any one of the supply terminal of the first voltage and the supply terminal of the second voltage, the data input/output block suitable for inputting and outputting a data signal using the first and second voltages based on the control signal, and a memory block, coupled to the data input/output block, suitable for writing or reading the data signal.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Woongrae Gyeonggi-do, KR 124 111
Lee, Yoo-Jong Gyeonggi-do, KR 5 6
Rim, A-Ram Seoul, KR 5 6

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