Vertical and trench type insulated gate MOS semiconductor device
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United States of America Patent
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Jun 15, 2010
Grant Date -
Nov 1, 2007
app pub date -
Apr 27, 2007
filing date -
Apr 27, 2006
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Abstract
-type emitter region selectively formed on the surface of the p-type channel region is wide by the side of the trench and becomes narrow toward the center point between the trenches. This enables the device to achieve low on-resistance and enhanced turn-off capability.
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