Non-volatile memory device and memory system including the same
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United States of America Patent
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May 20, 2014
Grant Date -
Aug 30, 2012
app pub date -
Feb 27, 2012
filing date -
Feb 28, 2011
priority date (Note) -
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Abstract
A non-volatile memory device and a read method thereof are disclosed. The read method includes providing a memory block having memory cells connected to word lines and connected in serial to a bit line, sensing potential of the bit line by applying a first read voltage to a selected word line of the word lines and providing a first pass voltage to an unselected word line adjacent to the selected word line, sensing potential of the bit line by applying a second read voltage higher than the first read voltage to the selected word line and providing a second pass voltage lower than the first pass voltage to the unselected word line adjacent to the selected word line, and sensing potential of the bit line by applying a third read voltage higher than the second read voltage to the selected word line and providing a third pass voltage lower than the second pass voltage to the unselected word line adjacent to the selected word line.
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