Semiconductor device and method for manufacturing the same

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United States of America Patent

PATENT NO 8716717
APP PUB NO 20130140582A1
SERIAL NO

13816511

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Abstract

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A RESURF layer including a plurality of P-type implantation layers having a low concentration of P-type impurity is formed adjacent to an active region. The RESURF layer includes a first RESURF layer, a second RESURF layer, a third RESURF layer, a fourth RESURF layer, and a fifth RESURF layer that are arranged sequentially from the P-type base side so as to surround the P-type base. The second RESURF layer is configured with small regions having an implantation amount equal to that of the first RESURF layer and small regions having an implantation amount equal to that of the third RESURF layer being alternately arranged in multiple. The fourth RESURF layer is configured with small regions having an implantation amount equal to that of the third RESURF layer and small regions having an implantation amount equal to that of the fifth RESURF layer being alternately arranged in multiple.

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Patent Owner(s)

  • MITSUBISHI ELECTRIC CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Furukawa, Akihiko Tokyo, JP 62 1333
Hamada, Kenji Tokyo, JP 80 544
Kagawa, Yasuhiro Tokyo, JP 34 237
Kawakami, Tsuyoshi Tokyo, JP 28 223
Miura, Naruhisa Tokyo, JP 48 768
Nakaki, Yoshiyuki Tokyo, JP 28 292

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