Vacuum deposition process and apparatus for producing films having high uniformity
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United States of America Patent
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Nov 5, 1991
Grant Date -
N/A
app pub date -
Sep 5, 1989
filing date -
Dec 18, 1987
priority date (Note) -
Expired
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Abstract
In order to deposit films of materials, such as polysilicon or silicon dioxide, on major surfaces of substrates by a low-pressure chemical vapor deposition (LPCVD) process, gas, such as a silane gas, is admitted to a chamber at one end and is pumped through the chamber by a pump. The substrates are mounted such that the general direction of gas flow is perpendicular to the substrate major surface, and are heated to cause reaction of the gas to form the required film. In order to achieve uniformity of the deposited films over a number of substrates, the pressure in the deposition chamber is maintained below 10m Torr.
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