Method for fabricating SRAM cell
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United States of America Patent
Stats
-
Oct 21, 2003
Grant Date -
Oct 31, 2002
app pub date -
Dec 12, 2001
filing date -
Apr 30, 2001
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A method of fabricating the SRAM cell is disclosed. The method includes forming a gate on a substrate, forming an oxidation barrier film on side portions of the gate, oxidizing the resultant structure by using an oxidation process to form an oxide film on a top surface of the gate, implanting high density impurity ions to the substrate to form a lightly doped region and a highly doped region in the substrate at side portions of the gate, forming an insulating layer over the substrate to define a contact hole that exposes portions of the gate and the highly doped region, and forming an interconnect in the contact hole to connect the gate and the highly doped region.
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