Liquid crystal display device
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United States of America Patent
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-
Aug 24, 2010
Grant Date -
Oct 22, 2009
app pub date -
Jun 23, 2009
filing date -
Dec 31, 2004
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A thin film transistor substrate of fringe field switching type and a fabricating method thereof for simplifying a process are disclosed. In the thin film transistor substrate of fringe field switching type, a gate line has a multiple-layer structure and includes a transparent conductive layer. A data line crosses the gate line to define a pixel area. A thin film transistor is connected to the gate line and the data line. A common line is provided in a multiple-layer structure and in parallel to the gate line. A common electrode is formed by an extension of a transparent conductive layer of the common line at said pixel area. A pixel electrode is connected to the thin film transistor to form a fringe field with the common electrode in the pixel area.
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