Air gap formation between gate spacer and epitaxy structure
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United States of America Patent
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Dec 26, 2023
Grant Date -
Dec 1, 2022
app pub date -
Aug 10, 2022
filing date -
Oct 30, 2018
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor device includes a gate stack, an epitaxy structure, a first spacer, a second spacer, and a dielectric residue. The gate stack is over a substrate. The epitaxy structure is formed raised above the substrate. The first spacer is on a sidewall of the gate stack. The first spacer and the epitaxy structure define a void therebetween. The second spacer seals the void between the first spacer and the epitaxy structure. The dielectric residue is in the void and has an upper portion and a lower portion under the upper portion. The upper portion of the dielectric residue has a silicon-to-nitrogen atomic ratio higher than a silicon-to-nitrogen atomic ratio of the lower portion of the dielectric residue.
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