Load sensor with vertical transistors
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United States of America Patent
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Jan 15, 2019
Grant Date -
Jul 13, 2017
app pub date -
Aug 21, 2015
filing date -
Sep 15, 2014
priority date (Note) -
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Abstract
A load sensor includes: a substrate; a rib on the substrate; and two vertical transistors. Each vertical transistor includes: a gate electrode, a gate insulation film, and a semiconductor thin film on the side surface of the rib; a bottom electrode layer on a bottom of the substrate, on which the rib is not arranged, with contacting the semiconductor thin film; and a top electrode layer on a top of the rib with contacting the semiconductor thin film. Each vertical transistor flows current between the bottom electrode layer and the top electrode layer when a channel region is provided in the semiconductor thin film. Each straight line along normal line directions of the channel regions in the vertical transistors is arranged on a different side surface of the rib from each other, and has a predetermined angle between the straight lines.
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