Semiconductor device structure with a fine pattern

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United States of America Patent

PATENT NO 11501970
SERIAL NO

17121037

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Abstract

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The present application discloses a semiconductor device structure. The semiconductor device structure includes a dielectric layer over a substrate, a first ring structure over the dielectric layer, and a second ring structure over the dielectric layer and surrounding the first ring structure, wherein the first and the second ring structures have a first common center.

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Patent Owner(s)

  • NANYA TECHNOLOGY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsueh, Yu-Han Taoyuan, TW 10 1

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