Flash memory device, programming method thereof and memory system including the same
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United States of America Patent
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Feb 15, 2011
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app pub date -
May 15, 2009
filing date -
May 15, 2008
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Abstract
A verify voltage may be changed into a plurality of voltage levels based upon a logic state of each of the memory cells and characteristics or logic states of other memory cells (e.g., adjacent) to each of the memory cells.
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